The DLP991UUV features 8.9M pixels, sub-micron resolution, and 110 gigapixels/sec throughput, enabling scalable, cost-effective maskless lithography for advanced packaging.
The 80V PSMN1R9-80SSJ and 100V PSMN2R3-100SSJ MOSFETs provide enhanced dynamic current sharing, designed for high-power 48V systems using multiple parallel MOSFETs.
Powered by Intel Core i3-N305, this 23.8” fanless system features IP66 protection, dual 2.5GbE LAN, wide voltage input, and versatile mounting for harsh industrial environments.
300mA device delivers ultra-low quiescent current, wide voltage tolerance, and high thermal resilience for body control, telematics, and EV applications.
New 25 V and 40 V devices deliver higher efficiency, reliability, and power density for switching and motor-drive applications in industrial and consumer markets.
Toshiba launched the TPH2R70AR5, a 100V N-channel power MOSFET using its U-MOS11-H process, featuring a 42% improved figure-of-merit to boost efficiency in industrial switched-mode power supplies.
Siemens is collaborating with TSMC on certifications and innovative design solutions at the OIP Forum, accelerating 3D IC and AI-driven circuit and systems design for mutual customers using TSMC's advanced process technologies.