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Isolated Gate Drivers Expand High-Voltage Power Design Options

STMicroelectronics introduced new 3A galvanically isolated gate drivers with integrated active Miller clamp for SiC MOSFET and IGBT applications in industrial power systems.

  www.st.com
Isolated Gate Drivers Expand High-Voltage Power Design Options

High-voltage power electronics require reliable gate drivers that can maintain safe isolation while supporting efficient switching under demanding operating conditions. STMicroelectronics has expanded its STGAP3S gate driver family with new 3A galvanically isolated devices designed for lower gate-drive current applications, extending the range of options available for silicon carbide (SiC) MOSFETs and insulated-gate bipolar transistor (IGBT) designs used across industrial power conversion systems.

New 3A Drivers Target Lower Gate-Drive Current Applications
The new STGAP3S3S is optimized for SiC MOSFETs, while the STGAP3S3IF is designed for IGBTs. These additions complement the existing 6A and 10A STGAP3S families, enabling engineers to select a gate driver with output current better matched to application requirements without compromising reinforced galvanic isolation.

The complete STGAP3S family supports high-voltage systems operating with rails up to 1200V, making the devices suitable for power-factor correction (PFC), switched-mode power supplies, DC/DC converters, and inverter designs.

Target applications include:
  • EV charging stations
  • Energy storage systems (ESS)
  • Solar inverters
  • Industrial electric vehicles such as forklifts
  • Induction heating equipment
  • Industrial drives
  • Pumps and fans
Reinforced Isolation Improves Reliability in High-Voltage Systems
A key feature of the STGAP3S family is reinforced galvanic isolation designed to improve system reliability in electrically noisy environments.

The devices withstand transient voltages up to 9.6kV while providing Common Mode Transient Immunity (CMTI) up to 200V/ns, helping maintain stable operation during rapid voltage transitions commonly encountered in modern SiC-based power converters.

The family has also obtained independent safety certifications, including UL 1577 and IEC 60747-17, confirming compliance with internationally recognized insulation and isolation requirements for high-voltage applications.

Integrated Active Miller Clamp Reduces External Components

Unlike the higher-current 6A and 10A versions, the new 3A drivers integrate the complete active Miller clamp, including the clamping MOSFET.

This integration prevents unintended turn-on of the power switch caused by Miller capacitance, reducing the risk of shoot-through currents. By integrating the MOSFET internally, the devices also reduce PCB area, simplify circuit implementation, and lower overall bill-of-material costs while maintaining suitable clamping performance for gate-drive currents up to 3A.

The higher-current STGAP3S6 and STGAP3SX families instead provide a pre-driver that allows designers to connect an external MOSFET, offering greater flexibility when optimizing clamping speed in applications requiring higher gate-drive currents.

Built-In Protection Features Support Robust Switching
All STGAP3S drivers incorporate desaturation detection combined with soft turn-off to protect power switches during overload and short-circuit events by providing controlled voltage and current transitions.

For the 6A and 10A drivers, as well as the new 3A SiC variant, engineers can connect an external resistor to adjust the soft turn-off speed according to system requirements.

Additional protection and monitoring features include:
  • Undervoltage lockout (UVLO)
  • Thermal shutdown indication
  • Desaturation fault indication
  • Support for negative gate voltage to improve immunity against unintended turn-on and enhance switching stability
These diagnostic outputs simplify system monitoring while improving fault management in industrial power electronics.

Evaluation Boards Accelerate Development
To support hardware evaluation, STMicroelectronics provides dedicated evaluation boards for the new devices.

The EVLSTGAP3S3S and EVLSTGAP3S3IF half-bridge boards include preconfigured protection circuitry, diagnostic LEDs, and test points that allow engineers to evaluate switching performance and protection functions during development.

Production Availability
The complete STGAP3S portfolio, including the new STGAP3S3 series alongside the existing STGAP3S6 and STGAP3SX families, is available in production. All devices are supplied in an SO16W wide-body package, with pricing starting at US$1.93 per unit in quantities of 1,000.

Additional Context
This section details technical specifications and competitive benchmarking not included in the original product announcement

Galvanically isolated gate drivers have become increasingly important as industrial systems transition toward higher switching frequencies and wide-bandgap semiconductors such as SiC MOSFETs. Compared with conventional silicon devices, SiC transistors deliver higher efficiency and faster switching but also require gate drivers capable of handling rapid voltage transients while preventing false switching events.

The market includes comparable isolated gate driver families from manufacturers such as Infineon Technologies, Texas Instruments, onsemi, Analog Devices, and Broadcom. While many competing solutions provide reinforced isolation, desaturation protection, and high CMTI performance, STMicroelectronics differentiates its new 3A series by integrating the active Miller clamp MOSFET directly into the driver. This approach reduces external components, saves PCB space, and simplifies power-stage design for applications where moderate gate-drive current is sufficient.

Edited by Sucithra Mani, Induportals editor – adapted by AI.


www.st.com

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