Infineon’s new MOSFETs feature ultra-low RDS(on), superior thermal performance, and high switching efficiency, making them ideal for EV and industrial applications such as chargers, converters, eFuses, and solid-state relays.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

Infineon Technologies AG bolsters its global and regional market leadership positions in automotive semiconductors, including its very strong position in microcontrollers.

As vehicle architectures transition to hybrid and electric models, conventional battery systems are increasingly being supplemented or replaced by 48 V power sources.

As the industry embraces digital transformation and the principles of Industry 4.0, communication protocols in industrial automation are becoming more important than ever.

Infineon’s 600V CoolMOS 8 Superjunction MOSFETs Enhance Efficiency, Simplify Design, and Reduce Costs for Enphase Energy’s Solar and Battery Systems.

Following the market launch of the industry's first PFC and hybrid flyback combo IC, Infineon Technologies AG is introducing the E-version of its hybrid flyback controller family.

Infineon Technologies AG is addressing this market trend with the CoolSiC Schottky diode 2000 V G5 product family, the first discrete silicon carbide diodes with a breakdown voltage of 2000 V, introduced in September 2024.

Infineon Technologies AG expands its XDP digital protection product family with the XDP711-001, a 48 V wide input voltage range digital hot swap controller with a programmable safe operating area control designed for high-power AI servers.

Infineon Technologies AG global semiconductor leader in power systems and IoT, launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute.