Rutronik Adds Infineon Technologies CoolGaN Drive HB 600 V G5
Integrated 600V GaN half-bridge enables compact, high-efficiency power designs.
www.rutronik.com
Rutronik has added Infineon’s CoolGaN™ Drive HB 600 V G5 to its portfolio, offering designers a highly integrated GaN half-bridge solution for high power density and energy-efficient applications across consumer, industrial and light electric vehicle markets.
The CoolGaN™ Drive HB 600 V G5 integrates two 600 V CoolGaN™ G5 transistors with an on-chip high-side/low-side gate driver, including level shifter and bootstrap diode. This integration significantly reduces external components, simplifies PCB layout and accelerates system integration.
Housed in a compact TFLGA-27 package (6 × 8 mm), the device supports high-density designs while minimizing board space. The integrated gate driver operates from a single 12 V supply and supports PWM-compatible control with adjustable dv/dt, enabling designers to optimize switching behavior and EMC performance.
Designed for high-frequency efficiency
Featuring zero reverse-recovery charge (zero-Qrr) and a typical propagation delay of 98 ns with low channel mismatch, the CoolGaN™ Drive HB 600 V G5 is well suited for high-frequency power converters. Fast UVLO recovery ensures stable operation under dynamic load conditions.
The JEDEC-qualified family targets demanding applications such as motor drives, switched-mode power supplies (SMPS), AC/DC, DC/DC and DC/AC converters, LLC resonant converters, and synchronous buck/boost topologies.
With reduced circuit complexity and enhanced efficiency, the CoolGaN™ Drive HB 600 V G5 supports shorter time-to-market for compact, next-generation power systems. The devices are available through Rutronik’s e-commerce platform.
www.rutronik.com
