Toshiba Introduces 6500V Press Pack IEGT

In high-voltage DC power transmission, industrial motor drives and reactive power compensation systems, power semiconductor devices must withstand high blocking voltages and fault currents while enabling compact converter architectures. Toshiba Electronics Europe GmbH has introduced a 6500V/2000A press pack injection enhanced gate transistor (IEGT) designed for high-voltage converters used in DC transmission systems, industrial drive equipment and static synchronous compensators (STATCOM).

The new device integrates trench-type IEGT chips with an optimised cell structure to enhance turn-off performance and short-circuit robustness. These characteristics address the demand for energy-efficient and space-optimised solutions in high-power infrastructure.

Increased turn-off voltage and short-circuit capability
Compared with Toshiba’s previous 6500V-class device, the new IEGT increases the turn-off test voltage from 3600V to 4500V. In addition, short-circuit testing has been successfully performed at 4500V, confirming improved tolerance under severe fault conditions.

The enhanced trench-type chip structure improves current handling and dynamic switching behaviour, enabling stable operation in converters exposed to high electrical stress. For DC transmission systems and large industrial drives, this increased voltage margin contributes to improved operational reliability and system safety.

Reduced series connection for compact HVDC systems
The 6500V rating enables engineers to reduce the number of series-connected semiconductor devices in high-voltage DC architectures. Fewer series elements simplify converter topology and reduce component count.

This reduction directly supports weight optimisation and equipment miniaturisation. In applications such as offshore wind farm converter stations, where transportation, installation and structural constraints are significant cost factors, compact converter modules can lower overall construction and logistics expenditure.

Press pack design for thermal and mechanical reliability
The device uses a press pack structure with double-sided cooling capability and hermetic sealing. This configuration ensures uniform pressure distribution across the silicon chips and supports efficient thermal management in high-current applications.

Press pack technology is widely used in high-voltage converter stacks due to its mechanical robustness and predictable failure behaviour. The new IEGT therefore aligns with established reliability requirements in transmission infrastructure and heavy industrial installations.

Application scope in power transmission and drives
Beyond high-voltage DC power transmission, the device supports industrial motor-drive systems operating at elevated voltage levels and reactive power compensation equipment such as STATCOM installations. Higher blocking voltage capability allows more compact converter layouts in these applications.

By extending its portfolio of press pack IEGTs, Toshiba continues to address the technical requirements of high-voltage converter systems requiring high blocking voltage, fault tolerance and reduced installation footprint.

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