Vishay Intertechnology introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET^® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR^® 3x3FS package.

Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages.

Device Offers High Power Density and Improved Thermal Performance in 3.3 mm x 3.3 mm PowerPAK^® 1212 F Package With Center Gate Design.

Device Offers Simple Integration, Precise Signal Detection, and Design Flexibility for Heart Rate Monitoring and Pulse Oximetry Applications in Wearables.

Featuring a VCSEL and Smart Dual I²C Slave Address, Device Is Ideal for Battery-Powered Consumer Applications, Including TWS Earphones and VR / AR Headsets.

Devices Offer Drop-in Replacements for Existing Solutions With Lower Current Consumption, Wider Voltage Range, and Improved ESD Robustness, Dark-Ambient Sensitivity, and Performance Under Strong DC Light.

High Speed Devices Save Energy in Industrial Applications While Enabling Usage With Low Voltage Microcontrollers and I²C Bus Systems.

Featuring Ferrite Core Technology, This Through-Hole Device Provides Low DCR to Reduce Power Losses and Increase Efficiency.

Providing Wide Input Voltage Ranges From 4.5 V to 60 V, Versatile Devices Feature Internal Compensation to Reduce External Components.

VSMY5850X01, VSMY5890X01, and VSMY5940X01 Shortlisted in “Semiconductor Product of the Year — Analog” Categor.