Toshiba Electronics Europe GmbH is to exhibit at Electronica 2022, showcasing solutions for a more energy efficient future. Booth C2.359 combines “Passion for Power Solutions” with demonstrations for Ethernet TSN and embedded control.

Overcurrent protection with automatic recovery and fault-status indicator, plus active Miller clamp, simplify design and save bill of materials.

Toshiba Electronics Europe GmbH (“Toshiba”) has launched a total of five new third-generation 650V silicon carbide (SiC) MOSFET devices for industrial equipment.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has expanded its lineup of stepping motor driver ICs with the launch of “TB67S549FTG,” a stepping motor driver IC housed in a small package, with built-in constant-current control that does not require external circuit components.

Toshiba Digital Solutions Corporation (Toshiba) today announced the general availability of GridDB 5.1 Enterprise Edition (GridDB 5.1 EE), a purpose-built database for IoT and Big Data workloads. The latest version features functionalities that allow GridDB to continue without interruption in the event of a failure or disaster at a public cloud data center.

Toshiba Electronics Europe GmbH has launched a ±2.5A output smart gate driver photocoupler able to control IGBTs and MOSFETs, reliably protecting power devices from over-current. The device is suited to a wide range of applications including inverters, AC servo drives, photovoltaic inverters and uninterruptible power supplies.

Toshiba Electronic Devices & Storage Corporation has developed silicon carbide (SiC) MOSFETs [1] with low on-resistance and significantly reduced switching loss—about 20% lower than in its second-generation SiC MOSFETs.

Toshiba Electronics Europe GmbH (“Toshiba”) today announces the availability of highly accurate G2 SPICE models allowing designers to more faithfully simulate the performance of their designs before committing to hardware.

Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have together developed the world’s first[1] 4.5-kV double-gate reverse-conducting injection-enhanced gate transistor (RC-IEGT[2][3]). Toshiba confirmed a total power loss, when switching on and off (switching loss), reduction of 24%[4] compared with the conventional single-gate structure.

Extended global partnership will increase the range of new power semiconductors and discrete devices offered by Farnell.