The new LPDDR5X is the optimal solution for future on-device applications and is expected to expand adoption into PCs, accelerators, servers and automobiles.

Samsung unveiled the expansion of its CXL memory module portfolio and showcased its latest HBM3E technology, reinforcing leadership in high-performance and high-capacity solutions for AI applications.

HBM3E 12H achieves industry’s largest capacity HBM with groundbreaking 12-layer stack, raising both performance and capacity by more than 50%.

Samsung samples industry-first 256GB SD Express microSD card boasting speeds more than four times faster than current interface.

The collaboration accelerates access to newest Arm CPU, enabling new class of SoCs with Generative AI capabilities.

New NVMe SSD offers improved performance, power efficiency and interface flexibility.

Along with its capacity, the T5 EVO delivers ultra-fast speeds in a compact, durable design as a cutting-edge, versatile SSD solution.

Samsung Electronics held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications.

The T9 is Samsung’s first Portable SSD featuring a USB 3.2 Gen 2x2 interface, delivering increased productivity with up to 2,000MB/s read/write speeds.

The new product provides double the capacity of 16Gb modules within the same package size, enabling 128GB DRAM module production without the TSV process, and decreasing power consumption by 10%.