Small-package TO-56CAN will contribute to miniaturized, low-power consumption of optical transceiver modules.

The model is expected to extend the range and reduce the power consumption of commercial radio equipment.

Six-model lineup of compact T-PMs and other modules will lead to smaller, more efficient inverters for xEVs.

The GaN power amplifier module achieves at least 43% power-added efficiency over a wide frequency range of 400 MHz, helping to reduce the power consumption of base stations.

The new modules will contribute to the more efficient, smaller and lighter industrial equipment by reducing internal inductance and incorporating an SiC chip.

The chip's new structure is expected to help downsize railway traction systems, etc. as well as make them more energy efficient, and contribute to carbon neutrality through the increased adoption of DC power transmission.

Mitsubishi Electric Corporation announced that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May 31, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems.

The 112Gbaud PAM4 EML chip will enable data centres to realize up to 800Gbps/1.6Tbps.

Mitsubishi Electric Corporation has announced that two new 12.75-13.25 GHz (Low-Ku band) 70W (48.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the company's GaN HEMT lineup for satellite-communication (SATCOM) earth stations.

Mitsubishi Electric Corporation announced that its new SLIMDIP-Z power semiconductor module, featuring an extra-high 30A rated current for use in inverter systems of home appliances, will be released in February 2023.